Analysis of α-factor of 1.55 μm-range vertical-cavity surface-emitting lasers based on InGaAs/InAlGaAs quantum wells

Kovach, Y.N., Blokhin, S.A., Bobrov, M.A., Blokhin, A.A., Maleev, N.A., Babichev, A.V., Karachinsky, L.Y., Novikov, I.I., Gladyshev, A.G., Kolodezniy, E.S., Voropaev, K.O., Ustinov, V.M., Egorov A.Y.

For Russian citation (Opticheskii Zhurnal):

Ковач Я.Н., Блохин С.А., Бобров М.А., Блохин А.А., Малеев Н.А., Бабичев А.В., Карачинский Л.Я., Новиков И.И., Гладышев А.Г., Колодезный Е.С., Воропаев К.О., Устинов В.М., Егоров А.Ю. Анализ α-фактора вертикально-излучающих лазеров спектрального диапазона 1,55 мкм на основе квантовых ям InGaAs/InAlGaAs // Оптический журнал. 2024. Т. 91. № 12. С. 24–34. http://doi.org/10.17586/1023-5086-2024-91-12-24-34

Kovach Ya.N., Blokhin S.A., Bobrov M.A., Blokhin A.A., Maleev N.A., Babichev A.V., Karachinsky L.Ya., Novikov I.I., Gladyshev A.G., Kolodeznyi E.S., Voropaev K.O., Ustinov V.M., Egorov A.Yu. Analysis of α-factor of 1.55 μm-range vertical-cavity surface-emitting lasers based on InGaAs/InAlGaAs quantum wells [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 12. P. 24–34. http://doi.org/10.17586/1023-5086-2024-91-12-24-34

For citation (Journal of Optical Technology):

Abstract:

Subject of study. Semiconductor vertical-cavity surface-emitting lasers, fabricated using a combined wafer-fusion and molecular beam epitaxy technique. Aim of study. Estimation of the α-factor values of the vertical-cavity surface-emitting lasers under study. Method. Estimations of the α-factor were done by using the direct measurements of the laser emission linewidth by scanning Fabry–Perot interferometer and based on the results of small-signal frequency analysis and determination of the shift of the resonant wavelength in the spectra of spontaneous emission when the concentration of charge carriers changes. Main results. An increase in the inverse population factor or charge carrier lifetime leads to a decrease of the α-factor for wafer-fused vertical-cavity surface-emitting lasers. For, the values of the α-factor of 3–4.5 for the studied lasers was obtained, depending on the photon lifetime. Practical significance. The obtained results make it possible to relate the photon lifetime in the laser cavity with the α-factor of 1.55 μm vertical-cavity surface-emitting lasers, which is important for the development of gas sensors as well as high-speed optical transceivers based on such lasers.

Keywords:

semiconductor vertical-cavity surface-emitting lasers, wafer-fusion technology, laser emission linewidth, α-factor

Acknowledgements:

the small-signal frequency analysis was performed with the support of the Ministry of Science and Higher Education of the Russian Federation, Project № 2019-1442 (Project Reference Number FSER-2020-0013). Electron microscopy studies were carried out using the equipment of the Center of Multi-User Equipment "Material Science and Diagnostics for Advanced Technologies" (Ioffe Institute, St. Petersburg)

OCIS codes: 140.5960, 250.5960, 140.7260, 250.7260, 160.6000, 060.4080, 060.4510

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