High-power p-i-n photodiode of 1300–1550 nm spectral range with a responsivity of 0.5 A/W at an optical radiation power of 50 mW

Kopytov, P.E., Rochas, S.S., Kolodezniy, E.S., Novikov, I.I., Voropaev, K.O.

For Russian citation (Opticheskii Zhurnal):

Копытов П.Е., Рочас С.С., Колодезный Е.С., Новиков И.И., Воропаев К.О. Мощный p-i-n фотодиод спектрального диапазона 1300–1550 нм с токовой чувствительностью 0,5 А/Вт при входной мощности оптического излучения 50 мВт // Оптический журнал. 2024. Т. 91. № 12. С. 3–12. http://doi.org/10.17586/1023-5086-2024-91-12-3-12

Kopytov P.E., Rochas S.S. Kolodeznyi E.S., Novikov I.I., Voropaev K.O. Highpower p-i-n photodiode of 1300–1550 nm spectral range with a sensitivity of 0.5 A/W at an optical radiation power of 50 mW [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 12. P. 3–12. http://doi.org/10.17586/1023-5086-2024-91-12-3-12

For citation (Journal of Optical Technology):

Abstract:

Subject of study. In this paper, p-i-n photodiode of 1300–1550 nm spectral range with 150 μm entrance window diameter was studied. The purpose of work. Optimizing the design of a 1300–1550 nm spectral range photodiode to increase sensitivity at increased values of at an optical radiation power of 50 mW. Method. Investigation of the static characteristics of the photodiode using the MPI TS150 probe station with Keithley 2611B source measure unit. Numerical calculation model of static characteristic of a photodiode is based on solving system of differential equations with finite element and volume methods in the COMSOL Multiphysics software package. Main results. The static characteristics of a p-i-n photodiode of 1300–1550 nm spectral range are investigated and a numerical modeling of static characteristics of a p-i-n photodiode is constructed considering thermal distributions during laser radiation absorption in this paper. We propose an optimized planar design of a p-i-n photodiode with increased sensitivity at high optical powers. The sensitivity of the proposed p-i-n photodiode design is 1,02–0,50 A/W at a power range of 1–50 mW, the dark current did not exceed 15 nA at a reverse bias voltage of –3 V. Practical significance. P-i-n photodiode design developed in this work with increased sensitivity at high optical powers can be used to increase the dynamic range and efficiency of transmitting a powerful optical signal in fiber-optic lines.

Keywords:

p-i-n photodiode, sensitivity, numerical model, COMSOL Multiphysics, heterostructure, fiber-optic communication

Acknowledgements:

this work was supported by the Ministry of Science and Higher Education of the Russian Federation, Research Project № 2019-1442

OCIS codes: 230.5170, 250.0040, 040.3060

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