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ISSN: 1023-5086

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ISSN: 1023-5086

Scientific and technical

Opticheskii Zhurnal

A full-text English translation of the journal is published by Optica Publishing Group under the title “Journal of Optical Technology”

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DOI: 10.17586/1023-5086-2024-91-06-67-77

УДК: 535.326: 539.120.61: 539.184.2

Controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal

For Russian citation (Opticheskii Zhurnal):

Гарифуллин А.И., Гайнутдинов Р.Х., Хамадеев М.А. Управление частотами фотонов, излучаемых одиночной квантовой точкой в одномерном фотонном кристалле // Оптический журнал. 2024. Т. 91. № 6. С. 67–77. http://doi.org/10.17586/1023-5086-2024-91-06-67-77

 

Garifullin A.I., Gainutdinov R.Kh., Khamadeev M.A. Controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 6. P. 67–77. http://doi.org/10.17586/1023-5086-2024-91-06-67-77

For citation (Journal of Optical Technology):

Adel I. Garifullin, Renat Kh. Gainutdinov, and Marat A. Khamadeev, "Controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal," Journal of Optical Technology. 91(6), 399-404 (2024). https://doi.org/10.1364/JOT.91.000399

Abstract:

Subject of study. A single quantum dot from InAs in a one-dimensional photonic crystal based on GaAs. Aim of study. Development of a method for controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal based on the effect of changes in the electromagnetic mass of an electron in the photonic crystal medium. Method. The proposed method is based on the effect of changing the electromagnetic mass of an electron in the photonic crystal medium. It manifests itself in the form of corrections to the energy levels of electrons, depending on the optical density of the medium. To control the latter, we propose to use the injection of free charge carriers and the quadratic electro-optic Kerr effect. Main results. Using the example of quantum transitions between the p- and s-states of a hydrogen-like quantum dot from InAs placed in the airvoids of a one-dimensional photonic crystal from GaAs, the fundamental possibility of controlling in situ the frequencies of photons emitted by a quantum dot was shown. This is possible based on the effect of changing the electromagnetic mass of an electron, as well as adjusting the refractive index of a photonic crystal by injection of free charge carriers and the electro-optic Kerr effect. The calculations carried out for the conditions described above showed that the range of photon energy control available in the experiment is small (several tens of microelectronvolts) to use in practice, and the displacement effect is inferior in order of magnitude to that already observed in the experiment. At the same time, we draw attention to the fact that the magnitude of the displacement of energy levels under the influence of the quantum electrodynamic effect under study depends quadratically on the refractive index of the material from which the photonic crystal is made. Therefore, we expect that the method described here will be significantly scaled as the optical density of the substance increases. Such photonic crystals can be obtained using metamaterials with a high refractive index. Practical significance. The results obtained in the work of developing a method for controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal will serve as the basis for the implementation of the photon-emitter interface, which contains key quantum functionality such as photonic qubits, single-photon light sources, as well as nonlinear quantum photon-photon gates.

Keywords:

photonic crystals, quantum dots, electromagnetic mass of an electron, quantum electrodynamics, electro-optical Kerr effect

Acknowledgements:

the work was funded by the strategic academic leadership program "Priority 2030" of Kazan Federal University under the Government of the Russian Federation

OCIS codes: 230.5298, 230.5590, 020.5580, 190.3270

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