Second-order nonlinear susceptibility hysteresis in silicon bulk crystal

Larin A.O., Ermina A.A., Zharova Y.A., Zuev D.A.

For Russian citation (Opticheskii Zhurnal):

Ларин А.О., Ермина А.А., Жарова Ю.А., Зуев Д.А. Гистерезис нелинейной восприимчивости второго порядка в кремнии // Оптический журнал. 2026. Т. 93. № 3. С. 33–39. http://doi.org/10.17586/1023-5086-2026-93-03-33-39

Larin A.O., Ermina A.A., Zharova Yu.A., Zuev D.A. Second-order nonlinear susceptibility hysteresis in silicon bulk crystal [in Russian] // Opticheskii Zhurnal. 2026. V. 93. № 3. P. 33–39. http://doi.org/10.17586/1023-5086-2026-93-03-33-39

For citation (Journal of Optical Technology):

Abstract:

Subject of the study. Effect of electrically induced second harmonic generation in single-crystal silicon with gold nanoparticles on the surface. Aim of study. Creation of hybrid nanostructures based on monocrystalline silicon with gold nanoparticles on the semiconductor surface and demonstration of optical hysteresis during the generation of the second harmonic from silicon in the absence and presence of metal nanoparticles supporting plasmon resonance. Method. Confocal laser scanning
spectroscopy of second harmonic generation with a source of femtosecond laser pulses at a wavelength
of 1047 nm. Main results. Hybrid nanostructures based on single-crystal silicon with gold nanoparticles
on the semiconductor surface were created, an amplification of the second harmonic signal and the
manifestation of a hysteresis loop in the graph of the dependence of the second harmonic generation
signal intensity on the excitation power were detected, scattering spectra from the studied structures
were obtained. Practical significance. An array of hybrid nanostructures can be used as an element
with the effect of optical non-volatile memory.

Keywords:

second harmonic generation, silicon, surface traps, memory effect, hysteresis

OCIS codes: 210.4680, 190.0190, 190.2620

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