УДК: 776.19; 772.99; 535.317
Holographic photolithography based on thin films of a glassy chalcogenide semiconductor
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Publication in Journal of Optical Technology
Корешев С.Н., Белых А.В., Ратушный В.П. Голографическая фотолитография на основе тонких пленок халькогенидного стеклообразного полупроводника // Оптический журнал. 2007. Т. 74. № 7. С. 80–85.
Koreshev S.N., Belykh A.V., Ratushniy V.P. Holographic photolithography based on thin films of a glassy chalcogenide semiconductor [in Russian] // Opticheskii Zhurnal. 2007. V. 74. № 7. P. 80–85.
S. N. Koreshev, A. V. Belykh, and V. P. Ratushnyĭ, "Holographic photolithography based on thin films of a glassy chalcogenide semiconductor," Journal of Optical Technology. 74 (7), 504-508 (2007). https://doi.org/10.1364/JOT.74.000504
Two possible implementations of a technology are proposed and investigated for projection holographic photolithography, based on the use of reflective relief-phase hologram-projectors fabricated on a chalcogenide recording medium and protective masks made from thin films of glassy chalcogenide semiconductor (GCS). One of them includes the use of a protective mask made from chemically developed GCS, which is essentially a negative inorganic photoresist. The second is based on the use of a hologram-projector and two successively placed protective masks, one of which is made from GCS successively developed by methods of chemical and ion etching, while the other is a chromium film that changes its structure during ion-plasma processing.
OCIS codes: 090.0090, 110.3960
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