УДК: 535.211, 621.315.592, 535.4
Photoluminescence of surface layers of CdTe when nanopulse laser radiation acts on them
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Publication in Journal of Optical Technology
Ивлев Г.Д., Гацкевич Е.И. Фотолюминесценция поверхностных слоев CdTe в условиях наноимпульсного воздействия лазерного излучения // Оптический журнал. 2008. Т. 75. № 6. С. 25–27.
Ivlev G.D., Gatskevich E.I. Photoluminescence of surface layers of CdTe when nanopulse laser radiation acts on them [in Russian] // Opticheskii Zhurnal. 2008. V. 75. № 6. P. 25–27.
G. D. Ivlev and E. I. Gatskevich, "Photoluminescence of surface layers of CdTe when nanopulse laser radiation acts on them," Journal of Optical Technology. 75 (6), 363-365 (2008). https://doi.org/10.1364/JOT.75.000363
This paper discusses the dynamics of photoluminescence excited in CdTe when a pulsed(τ=80ns) ruby laser acts on it, modifying a submicron surface layer. The dependences of the maximum photoluminescence intensity on the irradiation-energy density E are obtained for single, double, and triple laser pulses. The dependences thus established are explained by the influence of competing factors: the increase of the photoexcitation level with increasing E, and the temperature quenching of the photoluminescence. A photoluminescence-increase effect for energy densities above the surface-melting threshold of the semiconductor is detected.
OCIS codes: 350.3390
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