Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination

Бедрин А.Г., Миронов И.С., Роговцев П.Н. Экспериментальное исследование реакции фоточувствительных элементов оптико-электронных приборов на импульсную засветку // Оптический журнал. 2009. Т. 76. № 8. С. 79–84.

Bedrin A.G., Mironov I.S., Rogovtsev P.N. Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 8. P. 79–84.

A.G. Bedrin, I.S. Mironov, and P.N. Rogovtsev, "Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination," Journal of Optical Technology. 76 (8), 511-515 (2009). https://doi.org/10.1364/JOT.76.000511

This paper presents the results of a study of how pulsed radiation with a continuous spectrum created by a plasma light source based on magnetostriction discharge acts on the photosensitive elements of optoelectronic devices. The threshold values of the energy exposure are determined that cause a reduction of the photocurrent of a silicon element of a solar battery, reversible changes of the sensitivity of a silicon photodiode, and reversible changes of the sensitivity and resolving power of a silicon photodetector array with charge accumulation.