Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band–impurity transition probabilities

Левицкий Р.С., Перлин Е.Ю., Попов А.А. Многофотонная генерация электрон-дырочных пар в кристаллах с глубокими примесями. I. Вероятности двухфотонных переходов “зона-примесь” // Оптический журнал. 2010. Т. 77. № 10. С. 3–9.

Levitskiy R.S., Perlin E.Yu., Popov A.A. Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band–impurity transition probabilities [in Russian] // Opticheskii Zhurnal. 2010. V. 77. № 10. P. 3–9.

R. S. Levitskiĭ, E. Yu. Perlin, and A. A. Popov, "Multiphoton generation of electron-hole pairs in crystals with deep impurities. I. Two-photon band–impurity transition probabilities," Journal of Optical Technology. 77(10), 593-597 (2010). https://doi.org/10.1364/JOT.77.000593

The probabilities of two-photon transitions between electron states of the continuous spectrum (in the valence band or the conduction band) and discrete deep-impurity states in the band-gap region have been calculated. A two-band model of a zero-radius potential is used in the calculations to describe the deep-impurity states.

The research was supported by Federal education agency (grants Nos. 2.1.1/2166, 2.1.1.2532) and RFBR (grant No. 09-02-00223а).