Photoluminescence of micropowders of europium-doped cubic boron nitride

Шишонок Е.М., Леончик С.В., Braud A., Steeds J.W., Абдуллаев О.Р., Жигунов Д.М., Якунин А.С. Фотолюминесценция микропорошков кубического нитрида бора, активированного европием // Оптический журнал. 2010. Т. 77. № 12. С. 67–75.

Shishonok E.M., Leonchik S.V., Braud A., Steeds J.W., Abdullaev O.R., Zhigunov D.M., Yakunin A.S. Photoluminescence of micropowders of europium-doped cubic boron nitride [in Russian] // Opticheskii Zhurnal. 2010. V. 77. № 12. P. 67–75.

E. M. Shishonok, S. V. Leonchik, A. Braud, J. W. Steeds, O. R. Abdullaev, A. S. Yakunin, and D. M. Zhigunov, "Photoluminescence of micropowders of europium-doped cubic boron nitride," Journal of Optical Technology. 77(12), 788-795 (2010). https://doi.org/10.1364/JOT.77.000788

Micropowders of cubic boron nitride (cBN) doped with europium have been obtained by high-pressure synthesis. The photoluminescence (PL) of Eu3+ ions introduced into the crystal lattice of cBN has been investigated. It has been established from kinetic studies of the PL that the Eu3+ ions in cBN are located in two crystallographic positions with low symmetry of the crystal field. Annealing the cBN micropowders increases the number of crystallographic positions of Eu3+ in cBN to four, while electron irradiation causes the PL intensity of the Eu3+ ions to increase as a consequence of energy transport from the RC luminescent radiation centers. It has been established that, in an optoelectronic device, the UV electroluminescence of the InGaN/AlGaN/GaN heterostructure excites red PL of the Eu:cBN phosphor.