Design features and some implementations of silicon multiplexers for IR photodetectors

Козлов А.И. Особенности проектирования и некоторые реализации кремниевых мультиплексоров для инфракрасных фотоприемников // Оптический журнал. 2010. Т. 77. № 7. С. 19–29.

Kozlov A.I. Design features and some implementations of silicon multiplexers for IR photodetectors [in Russian] // Opticheskii Zhurnal. 2010. V. 77. № 7. P. 19–29.

A. I. Kozlov, "Design features and some implementations of silicon multiplexers for IR photodetectors," Journal of Optical Technology. 77(7), 421-428 (2010). https://doi.org/10.1364/JOT.77.000421

This paper discusses the features of the design and organization of silicon multiplexers for linear and array-type IR photodetectors. These have been used as a basis for developing nineteen silicon multiplexers intended for combined operation with multielement photodiode detectors based on mercury-cadmium tellurium compound, with multielement photoresistive detectors based on multilayer quantum-well structures, and other types of photodetectors having spectral sensitivity in the 3-5 and 8-16-μm ranges. The multiplexers can be used as a basis for creating hybrid and monolithic photodetectors of various formats for the mid- and far-IR regions with fairly good temperature resolution (<0.02K).

The author is thankful to academician Aseev A.L. and doctor of physics and mathematics Ovsyuk V.N. for the support and useful discussion of the results of this work.