Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors

Дюкин Р.В., Марциновский Г.А., Шандыбина Г.Д., Яковлев Е.Б. Электрофизические явления при фемтосекундных воздействиях лазерного излучения на полупроводники // Оптический журнал. 2011. Т. 78. № 2. С. 8–13.

Dyukin R.V., Martsinovskiy G.A., Shandybina G.D., Yakovlev E.B. Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors [in Russian] // Opticheskii Zhurnal. 2011. V. 78. № 2. P. 8–13.

R. V. Dyukin, G. A. Martsinovskiĭ, G. D. Shandybina, and E. B. Yakovlev, "Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors," Journal of Optical Technology. 78(2), 88-92 (2011). https://doi.org/10.1364/JOT.78.000088

The space–time concentration distribution of nonequilibrium charge carriers is numerically modelled under the action of ultrashort laser radiation pulses on semiconductors, taking into account the external emission of electrons. The results are compared with the experimental conditions for the excitation and propagation of waveguide modes in silicon under the action of femtosecond pulses with a quantum energy of about 0.98 eV.

The research was supported by RFBR grants Nos. 09-02-00932,10-02-00208а and state contract No. П1134.