Dynamics of the permittivity of a semiconductor acted on by a femtosecond laser

Дюкин Р.В., Марциновский Г.А., Шандыбина Г.Д., Яковлев Е.Б., Никифоров И.Д., Гук И.В. Динамика диэлектрической проницаемости полупроводника при фемтосекундном лазерном воздействии // Оптический журнал. 2011. Т. 78. № 8. С. 118–124.

Dyukin R.V., Martsinovskiy G.A., Shandybina G.D., Yakovlev E.B., Nikiforov I.D., Guk I.V. Dynamics of the permittivity of a semiconductor acted on by a femtosecond laser [in Russian] // Opticheskii Zhurnal. 2011. V. 78. № 8. P. 118–124.

R. V. Dyukin, G. A. Martsinovskiĭ, G. D. Shandybina, E. B. Yakovlev, I. D. Nikiforov, and I. V. Guk, "Dynamics of the permittivity of a semiconductor acted on by a femtosecond laser," Journal of Optical Technology. 78(8), 558-562 (2011). https://doi.org/10.1364/JOT.78.000558

A theoretical analysis of how the permittivity of a broad-band semiconductor varies while it is being acted on by a femtosecond laser pulse is presented, taking into account various types of emission phenomena. The spatial permittivity distribution considered here is modelled experimentally, using surface plasmon resonance on the corresponding multilayer structures and is compared with the data of femtosecond microstructuring of silicon at a wavelength of 1.25 µm.

The research was supported by the grants of RFBR Nos. 09-02-00932, 10-02-002208 and state contract No. П1134.