Surface morphology analysis of CdTe buffer layers using ellipsometry and interference profilometry to create a technique for monitoring the growth of buffer layers

Shvets V.А., Marin D.V., Kuznetsova L.S., Azarov I.A., Yakushev, M.V., Rykhlitskii S.V.

Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Швец В.А., Марин Д.В., Кузнецова Л.С., Азаров И.А., Якушев М.В., Рыхлицкий С.В. Анализ морфологии поверхности буферных слоёв CdTe с помощью эллипсометрии и интерференционной профилометрии для создания методики контроля роста буферных слоёв // Оптический журнал. 2024. Т. 91. № 2. С. 50–58. http://doi.org/10.17586/1023-5086-2024-91-02-50-58

Shvets V.A., Marin D.V., Kuznetsova L.S., Azarov I.A., Yakushev M.V., Rykhlitskii S.V. Surface morphology analysis of CdTe buffer layers using ellipsometry and interference profilometry to create a technique for monitoring the growth of buffer layers [in Russian] // Opticheskii Zhurnal. 2024. Т. 91. № 2. С. 50–58. http://doi.org/10.17586/1023-5086-2024-91-02-50-58

For citation (Journal of Optical Technology):

Vasily A. Shvets, Denis V. Marin, Lada S. Kuznetsova, Ivan A. Azarov, Maxim V. Yakushev, and Sergey V. Rykhlitskii, "Surface morphology analysis of CdTe buffer layers using ellipsometry and interference profilometry to create a technique for monitoring the growth of buffer layers," Journal of Optical Technology. 91(2), 91-95 (2024). https://doi.org/10.1364/JOT.91.000091

Abstract:

The subject of study is an alternative substrate for the growth of a ternary compound mercury-cadmium-telluride consisting of silicon with CdTe and ZnTe layers deposited on it. The aim of study is the construction of a model of the rough surface of CdTe films to create a technique for quality control of growing structures. Method. Non-destructive methods with sufficient resolution are required as roughness measurement techniques. These conditions are satisfied by optical research methods. In this work, ellipsometry and interference profilometry were used. Main results. The roughness of CdTe films was studied using ellipsometry and interference profilometry. It is shown that these two methods perfectly complement each other and provide more complete picture of the profile surface than each one separately. A two-scale model of the rough surface of CdTe buffer layers representing a slightly wavy surface with a small-scale relief superimposed on it has been constructed. It is shown that it is the small-scale relief that affects the ellipsometric measurements . This was used to develop a technique for controlling the process of epitaxial growth of buffer layers. Practical significance. The results of studying the surface roughness of CdTe films obtained in this work serve as the basis for the development of methods for controlling the parameters of CdTe layers suitable for growing high-quality photosensitive structures.

Keywords:

ellipsometry, interference profilometry, surface relief, mercury-cadmium-telluride, cadmium telluride, alternative substrate

Acknowledgements:

the work was carried out with financial support from the Ministry of Science and Higher Education, Grant № 075-15-2020-797 (13.1902.21.0024)

OCIS codes: 120.2130, 120.3180, 180.3170

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