Optical properties of InGaP(As) quantum dots in GaAs/AlGaAs/InGaP/InGaAs heterostructures

Andryushkin, V.V., Novikov, I.I., Gladyshev, A.G., Babichev, A.V., Nevedomsky V.N., Papylev D.S., Kolodezniy, E.S., Karachinsky, L.Y., Egorov A.Y.

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Publication in Journal of Optical Technology

For Russian citation (Opticheskii Zhurnal):

Андрюшкин В.В., Новиков И.И., Гладышев А.Г., Бабичев А.В., Неведомский В.Н., Папылев Д.С., Колодезный Е.С., Карачинский Л.Я., Егоров А.Ю. Оптические свойства квантовых точек InGaP(As) в гетероструктурах GaAs/AlGaAs/InGaP/InGaAs // Оптический журнал. 2024. Т. 91. № 6. С. 30–38. http://doi.org/ 10.17586/1023-5086-2024-91-06-30-38

Andryushkin V.V., Novikov I.I., Gladyshev A.G., Babichev A.V., Nevedomsky V.N., Papylev D.S., Kolodeznyi E.S., Karachinsky L.Ya., Egorov A.Yu. Optical properties of InGaP(As) quantum dots in GaAs/AlGaAs/InGaP/InGaAs heterostructures // Opticheskii Zhurnal. 2024. V. 91. № 6. P. 30–38. http://doi.org/ 10.17586/1023-5086-2024-91-06-30-38

For citation (Journal of Optical Technology):

Vladislav V. Andryushkin, Innokenty I. Novikov, Andrey G. Gladyshev, Andrey V. Babichev, Vladimir N. Nevedomsky, Denis S. Papylev, Evgenii S. Kolodeznyi, Leonid Ya. Karachinsky, and Anton Yu. Egorov, "Optical properties of InGaP(As) quantum dots in GaAs/AlGaAs/InGaP/InGaAs heterostructures," Journal of Optical Technology. 91(4), 378-382 (2024). https://doi.org/10.1364/JOT.91.000378

Abstract:

Subject of study. InGaP(As) quantum dots in GaAs/AlGaAs/InGaP/InGaAs heterostructures.
Aim of study. Establishing a dependency of the InGaP(As) semiconductor quantum dots maximum
photoluminescence spectrum wavelength on the location of InGaAs quantum wells in GaAs/AlGaAs/
InGaP/InGaAs heterostructures. Method. InGaP(As) quantum dots were obtained using molecular
beam epitaxy technology by replacing phosphorus with arsenic in a thin InGaP layer during epitaxial
growth. The optical properties of InGaP(As) quantum dots were studied by photoluminescence
spectroscopy. Main results. It is shown that the use of the InGaAs quantum well as the formation
surface of the transformed into quantum dots InGaP layer does not affect the wavelength of the
maximum photoluminescence spectrum of the quantum dots. At the same time a long-wave shift of
the photoluminescence spectrum of quantum dots by 56 nm is observed when the quantum dots are
overgrown with 5-nm thick InGaAs quantum well with the molar fraction of InAs 0.17. The surface
density of quantum dots was 1.3х10¹² cm^–2. Practical significance. The results obtained in the study
of the optical properties of InGaP(As) quantum dots will serve as the basis for the development of the
active region for near-infrared sources.

Keywords:

quantum dots, heterostructures, molecular-beam epitaxy, semiconductors

Acknowledgements:

this work was supported by the Ministry of Science and Higher Education of the Russian Federation, research project № 2019-1442 (project reference number FSER-2020-0013).

OCIS codes: 130.5990, 160.6000, 250.5590

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