Photoelectric properties of MIS structures based on HgCdTe nBn with a superlattice in the barrier region

Voytsekhovskiy, A.V., Dzyadukh S.M., Gorn D.I., Mikhaylov, N.N., Dvoretskiy, S.A., Sidorov, G.Y., Yakushev, M.V.

For Russian citation (Opticheskii Zhurnal):

Войцеховский А.В., Дзядух С.М., Горн Д.И., Михайлов Н.Н., Дворецкий С.А., Сидоров Г.Ю., Якушев М.В. Фотоэлектрические свойства МДП-структур на основе HgCdTe nBn со сверхрешёткой в барьерной области // Оптический журнал. 2024. Т. 91 № 10. С. 3–14. http://doi.org/10.17586/1023-5086-2024-91-10-3-14

Voitsekhovskii1 A.V., Dzyadukh S.M., Gorn D.I., Mikhailov N.N., Dvoretsky S.A., Sidorov G.Yu., Yakushev M.V. Photoelectric properties of MIS structures based on HgCdTe nBn with a superlattice in the barrier region [in Russian] // Opticheskii Zhurnal. 2024. V. 91. № 10. P. 3–14. http://doi.org/10.17586/1023-5086-2024-91-10-3-14

For citation (Journal of Optical Technology):

Abstract:

Subject of study. Application of superlattices as barrier layers in unipolar barrier nBn structures based on n-HgCdTe grown by molecular beam epitaxy. Aim of study. To determine the degree of influence of optical radiation in the infrared range on the electrical characteristics of nBn structures based on HgCdTe, grown by molecular beam epitaxy, with a superlattice in the barrier region. Method. Epitaxial Hg1–xCdxTe films, which are nBn structures with a superlattice in the barrier region, were grown using molecular beam epitaxy. The superlattice of 18 periods in the structure under study included barrier layers 9 nm thick (Hg0.2Cd0.8Te) and wells (HgTe) 2 nm thick. From these films, metal-insulator-semiconductor structures were produced, which were individual mesa structures on a single substrate, obtained by etching. Studies of photoelectric properties were carried out on an automated heterostructure admittance spectroscopy setup, consisting of a Janis non-optical closedcycle helium cryostat with a Lake Shore 335 temperature controller. The study of structure admittance was carried out on an Agilent E4980A setup. The studies were carried out in the absence and presence of infrared light-emitting diode illumination with a wavelength of 940 nm. The sample under study was placed in a vacuum chamber on a cooled table with a hole. Main results. The measurement results presented in this work show that, obviously, illumination with an infrared light-emitting diode has a significant effect on the admittance characteristics of the structure under study. The dependences of electrical capacitance and differential conductivity on voltage observed in experiments, both in the dark and under illumination with an infrared light-emitting diode, cannot be directly interpreted by analogy with the analysis of admittance studies of classical metal-insulator-semiconductor structures. In particular, such effects as complex hysteresis when changing the scan direction when measuring dark characteristics, the frequency dependence of the level of dark capacitance in the enrichment mode, as well as the influence of illumination on the value of the capacitance in the enrichment mode have a form that is significantly different from the case of a classical metal-insulator-semiconductor structure. These effects can be explained by the presence of a superlattice in the barrier layer of the structure, which has its own complex conductivity and affects the complex conductivity of the metalinsulator-semiconductor structure. At the same time, additional research is required to describe in detail the nature of the influence of the superlattice on the electrical properties of barrier structures based on HgCdTe. Practical significance. This work is devoted to the first studies of the photoelectric properties of the structure of nBn structures based on HgCdTe, grown by molecular beam epitaxy, with a superlattice in the barrier region. Taking into account the fact that the use of superlattices in barrier nBn structures based on n-HgCdTe is considered as the most promising way to eliminate the potential barrier for minority charge carriers, the results of this work can form the basis for the development of designs for photosensitive structures in mid-wave infrared and long-wave infrared ranges and the subsequent creation of photodetectors elements. Photoelectric measurements are part of the photosensitive structure development process aimed at creating highly sensitive mid-wave infrared and long-wave infrared photonic detectors.

Keywords:

barrier structure, HgCdTe, nBn, superlattice, molecular beam epitaxy, unipolar structure, photodetector, photoelectric properties, addmittance

Acknowledgements:

this work was supported by the Russian Science Foundation, Project № 23-62-10021, https://rscf.ru/project/23-62-10021/

OCIS codes: 250.5590, 040.4200, 040.3060

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