320×256 photodetector arrays with a built-in short-wavelength cutoff filter

Васильев В.В., Варавин В.С., Дворецкий С.А., Марчишин И.В., Михайлов Н.Н., Предеин А.В., Ремесник В.Г., Сабинина И.В., Сидоров Ю.Г., Сусляков А.О. Матричные фотоприемники 320×256 со встроенным коротковолновым отрезающим фильтром // Оптический журнал. 2009. Т. 76. № 12. С. 36–41.

Vasiliev V.V., Varavin V.S., Dvoretskiy S.A., Marchishin I.V., Mikhailov N.N., Predein A.V., Remesnik V.G., Sabinina I.V., Sidorov Yu.G., Suslyakov A.O. 320×256 photodetector arrays with a built-in short-wavelength cutoff filter [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 12. P. 36–41.

V. V. Vasil’ev, V. S. Varavin, S. A. Dvoretsiĭ, I. V. Marchishin, N. N. Mikhaĭlov, A. V. Predein, V. G. Remesnik, I. V. Sabinina, Yu. G. Sidorov, and A. O. Suslyakov, "320×256 photodetector arrays with a built-in short-wavelength cutoff filter," Journal of Optical Technology. 76 (12), 762-766 (2009). https://doi.org/10.1364/JOT.76.000762

This paper proposes a photodetector design based on a CdHgTe variband heteroepitaxial structure with a high-conductivity layer (HCL) that ensures that the photodiodes have low series resistance and simultaneously serves the function of a short-wavelength cutoff filter. Based on an analysis of how the parameters of the HCL affect the quantum efficiency and the noise-equivalent temperature difference of the photodetector arrays (PDAs), its optimum parameters are determined. Samples of PDAs are fabricated with a format of 320×256 elements for the 8-12-μm spectral range, based on hybrid assembly of photosensitive elements made from p-type (013) HgCdTe/CdTe/ZnTe/GaAs heteroepitaxial structures with an HCL and a silicon multiplexer. The voltage sensitivity, the threshold irradiance, and the noise-equivalent temperature difference at the maximum sensitivity were 4.1×108V/W, 1.02×10−7W/cm2, and 27mK, respectively.