Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version

Якушев М.В., Васильев В.В., Дегтярев Е.В., Дворецкий С.А., Козлов А.И., Новоселов А.Р., Сидоров Ю.Г., Фомин Б.И., Асеев А.Л. Исследование процессов формирования инфракрасного фотоприемника на основе CdHgTe в монолитном исполнении // Оптический журнал. 2009. Т. 76. № 12. С. 55–62.

Yakushev M.V., Vasiliev V.V., Degtyarev E.V., Dvoretskiy S.A., Kozlov A.I., Novoselov A.R., Sidorov Yu.G., Fomin B.I., Aseev A.L. Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version [in Russian] // Opticheskii Zhurnal. 2009. V. 76. № 12. P. 55–62.

M. V. Yakushev, V. V. Vasil’ev, S. A. Dvoretskiĭ, A. I. Kozlov, A. R. Novoselov, Yu. G. Sidorov, B. I. Fomin, A. L. Aseev, and E. V. Degtyarev, "Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version," Journal of Optical Technology. 76 (12), 777-782 (2009). https://doi.org/10.1364/JOT.76.000777

This paper discusses the results of investigations of processes for forming monolithic integrated cadmium-mercury telluride (CdHgTe)-based IR arrays and their parameters. The processes for growing CdHgTe heteroepitaxial layers (HELs) by molecular-beam epitaxy (MBE) in the cells of a silicon multiplexer have been studied, as well as for forming an n-p junction and contact compounds. For the selective growth of CdHgTe MBE HELs, regimes have been determined for preparing a silicon surface in dielectric windows with dimensions from 30×30to100×100μm. Selective layers of CdHgTe (8μm)/CdTe(5-7μm)/ZnTe(0.02μm) have been grown on Si (310). Ion implantation of boron into selective p-type layers has been used to form n-p junctions. Measurements showed that the parameter R0A is 1.25×105Ωcm2 for the spectral range 3-5μm. A monolithic linear array of format 1×32, based on a CdHgTe MBE HEL, has been fabricated by growth in the cells of a silicon multiplexer.